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一种增强型槽栅 MIS-HEMT 器件及其制备方法
Release Time:2025-11-08     Hits:
  • Institution:广州研究院
  • First Author:李祥东
  • Type of Patent:Invent
  • Application Number:CN202411781595.9
  • Authorization Number:CN202411781595.9
  • Number of Inventors:5
  • Service Invention or Not:No
  • Application Date:2024-12-05
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Xiangdong Li
Personal Information
  • Name (Simplified Chinese):李祥东
  • Name (English):Xiangdong Li
  • Name (Pinyin):LIXIANGDONG
  • E-Mail:
  • Date of Employment:2021-03-01
  • School/Department:广州研究院
  • Education Level:With Certificate of Graduation for Doctorate Study
  • Business Address:广州市黄埔区中新广州知识城广州第三代半导体创新中心
  • Gender:Male
  • Professional Title:Professor
  • Status:On duty
  • Academic Titles:广州第三代半导体创新中心副主任
  • Discipline:Microelectronics and Solid State Electronics,Integrated Circuit System Design