Energy-band Alignment of (hfo2)(x)(al2o3)(1-x) Gate Dielectrics Deposited by Atomic Layer Deposition on Beta-ga2o3 (-201)
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Title of Paper:Energy-band Alignment of (hfo2)(x)(al2o3)(1-x) Gate Dielectrics Deposited by Atomic Layer Deposition on Beta-ga2o3 (-201)
Journal:Applied Surface Science
Correspondence Author:元磊
Volume:433
Issue:Mar.1
Page Number:530-534
Translation or Not:No
Date of Publication:2018-03-01
Date:2024-04-09