Hits:
Title of Paper:High Temperature Reliability And Performance Evaluation of 1200 V Sic Mosfets
Journal:Journal of Crystal Growth
Correspondence Author:元磊
Volume:606
Translation or Not:No
Date of Publication:2023-03-01
Date:2024-04-15
Prev One:Crystallographic Orientation-dependent Resistive Switching Devices Based on Hybrid Ga2o3 Thin Films
Next One:Enhanced Responsivity of Beta-ga2o3 Ultraviolet Photodetector Using Pt/ito Stacked Electrode