Stress-induced Charge Trapping And Electrical Properties of Atomic-layer-deposited Hfalo/ga2o3 Metal-oxide-semiconductor Capacitors
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Title of Paper:Stress-induced Charge Trapping And Electrical Properties of Atomic-layer-deposited Hfalo/ga2o3 Metal-oxide-semiconductor Capacitors
Journal:Journal of Physics D-applied Physics
Correspondence Author:元磊
Volume:52
Issue:21
Translation or Not:No
Date of Publication:2019-05-01
Date:2024-04-08