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个人信息Personal Information
教授
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：返聘
所在单位：微电子学院
入职时间：1986-12-01
学科：集成电路系统设计. 微电子学与固体电子学. 凝聚态物理
扫描关注
- Tan, Lu^Chai, Changchun^Fan, Qingyang^Yang, Yintang,Mechanical and electronic properties of C-Si alloys in the P222(1) structure:CHINESE JOURNAL OF PHYSICS,2016,54(5):700-710
- Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang; Qiao, Liping; Zhao, Yinbo; Zhou, Peikun; Xing, Mengjiang; Zhang, Junqin; Yao, Ronghui,Mechanical and electronic properties of Ca1-xMgxO alloys:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,40:676-684
- Fan, Qingyang^Chai, Changchun^Wei, Qun^Yang, Yintang^Yang, Qi^Chen, Pengyuan^Xing, Mengjiang^Zhang, Junqin^Yao, Ronghui,Prediction of novel phase of silicon and Si-Ge alloys:JOURNAL OF SOLID STATE CHEMISTRY,2016,233:471-483
- Fan, Qingyang ; Chai, Changchun ; Wei, Qun ; Yang, Yintang ; Yang, Qi ; Chen, Pengyuan ; Xing, Mengjiang ; Zhang, Junqin ; Yao, Ronghui ,Prediction of novel phase of silicon and Si-Ge alloys:Journal of Solid State Chemistry,2016,233:471-483
- Qiao, Liping ; Chai, Changchun ; Yu, Xinhai ; Yang, Yintang ; Liu, Yang ,First-principles calculations of electrical and optical properties of strained ZnO:Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society,2015,43(4):424-430
- Liang, Chaoxian^Chai, Changchun^Fan, Qingyang^Yang, Yintang^Xing, Mengjiang,Elastic and electronic properties of M585 carbon under pressure:CHINESE JOURNAL OF PHYSICS,2016,54(3):398-407
- Shi, Chunlei ; Chai, Changchun ; Yang, Yintang ; Fang, Wenxiao ,Estimating termination effect on electric and magnetic field-to-line coupling for radiated immunity tests using a TEM cell:Progress in Electromagnetics Research Letters,2016,60:39-44
- Liu, Yang^Chai, ChangChun^Fan, QingYang^Shi, ChunLei^Xi, Xiaowen^Yu, XinHai^Yang, YingTang,Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse:MICROELECTRONICS RELIABILITY,2016,66:32-37
- Zhang, Yuhang^Chai, Changchun^Fan, Qingyang^Yang, Yintang^Xing, Mengjiang,Mechanical and electronic properties of Si-Ge alloy in Cmmm structure:CHINESE JOURNAL OF PHYSICS,2016,54(2):298-307
- Fan, Qingyang^Chai, Changchun^Wei, Qun^Yang, Qi^Zhou, Peikun^Xing, Mengjiang^Yang, Yintang,Mechanical and electronic properties of Si, Ge and their alloys in P4(2)/mnm structure:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,43:187-195