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Scientific Research
王冲
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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Scientific Research
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Paper Publications
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李昂,Lattice-matched AlInN_GaN multi-channel__heterostructure and HEMTs with low onresistance:Applied physics Letter,2021,(119)
GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V:Superlattices and Microstructures,2021,"Vol. 156,(106952)
Comparative Study of Characteristics and Interface States with and without Post-Gate-Annealing Treatment for AlGaN/GaN-Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2020,1900981
Effects of Recess Depths on Performance of AlGaNGaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator:Solid State Electronics,2020,"Vol,163,(107649):pp:1-6"
Wang, Chong; He, Yunlong; Zheng, Xuefeng; Zhao, Mengdi; Mi, Minhan; Li, Xiangdong; Mao, Wei; Ma, Xiaohua; Hao, Yue,Low ohmic-contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region:ELECTRONICS LETTERS,2015,51(25):2146-2147
GaN-based FinFET with double-channel AlGaN/GaN heterostructure:Electronics Letters,2018,54(5)
Patents
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全透明AlGaN/GaN高电子迁移率晶体管及其制作方法
InAlN/GaN异质结增强型高电子迁移率晶体管结构及制作方法
多沟道侧栅结构的AlGaN/GaN高电子迁移率晶体管
多沟道侧栅结构的绝缘栅AlGaN/GaN高电子迁移率晶体管
王冲,深亚微米栅长AlGaN/GaNHEMT制作方法
王冲,AlGaN/GaN异质结增强型器件及其制作方法
Published Books
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Research Projects
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晶格匹配的InAlN/GaN异质结多沟道高线性度器件研究,在研,2020-01-01,王冲
固态功率放大器热载流子效应评估,完成,2018-04-01,王冲
GaN基宽带功率器件研究,完成,2016-07-01,王冲
基于FinFET结构的GaN基数字电路关键技术研究,完成,2016-01-01,王冲
Research Team
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