Progress of Ultra-wide Bandgap Ga2o3 Semiconductor Materials in Power Mosfets
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Title of Paper:Progress of Ultra-wide Bandgap Ga2o3 Semiconductor Materials in Power Mosfets
Journal:IEEE Transactions on Power Electronics
Correspondence Author:元磊
Volume:35
Issue:5
Page Number:5157-5179
Translation or Not:No
Date of Publication:2020-05-01
Date:2024-05-10
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